Microwave Nonlinearities in Ge/Si Avalanche Photodiodes having a Gain-Bandwidth Product of 300 GHz

被引：0
|
作者：
Piels, M. [1 ]
Ramaswamy, A. [1 ]
Zaoui, W. Sfar [1 ]
Bowers, J. E. [1 ]
Kang, Y. [2 ]
Morse, M. [2 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Intel Corp, Santa Clara, CA 95054 USA
来源：
OFC: 2009 CONFERENCE ON OPTICAL FIBER COMMUNICATION, VOLS 1-5 | 2009年
关键词：
DISTORTION;
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The nonlinearity of a 300 GHz gain bandwidth Separate Absorption Charge Multiplication (SACM) Ge/Si avalanche photodiode was examined experimentally for varying multiplication factors. The maximum second order dynamic range was 84.8 dB-Hz(1/2). The largest third order dynamic range was 101.5 dB-Hz(2/3). (C)2008 Optical Society of America
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页码：1158 / +
页数：2
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