Low-Temperature-Processed Power Schottky Diode Based on Amorphous Indium-Tin-Zinc-Oxide/Indium-Gallium-Zinc-Oxide Bilayer

被引：12
|
作者：
Zhou, Xianda [1 ]
Lu, Lei [2 ]
Wang, Kai [1 ]
Wong, Man [3 ,4 ]
Sin, Johnny K. O. [4 ]
Kwok, Hoi-Sing [3 ,4 ]
机构：
[1] Sun Yat Sen Univ, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China
[2] Peking Univ, Sch Elect & Comp Engn, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China
[3] HKUST, State Key Lab Adv Displays & Optoelect Technol, Hong Kong, Peoples R China
[4] HKUST, Dept Elect & Comp Engn, Hong Kong, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 11期
基金：
美国国家科学基金会;
关键词：
Schottky diodes; Metals; Substrates; Schottky barriers; Junctions; Electric breakdown; Amorphous oxide semiconductors (AOSs); indium-tin-zinc-oxide (ITZO); indium-gallium-zinc-oxide (IGZO); power semiconductor devices; thin-film transistors (TFTs); THIN-FILM TRANSISTORS; SEMICONDUCTOR; ETCH;
D O I：
10.1109/TED.2019.2940720
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Schottky diode based on amorphous wide bandgap oxide semiconductor is experimentally demonstrated with reasonable performance. The Schottky barrier is formed between the room-temperature sputtered amorphous indium-tin-zinc-oxide/indium-gallium-zincoxide bilayer and platinum, and a highly-resistive, self-aligned junction termination region is implemented at only 280 degrees C. Due to such low-temperature process, oxide-based Schottky diode is very attractive in terms of low manufacturing cost and back-end-of-line (BEOL) integration compatibility. The proposed Schottky diode has an ideality factor of 1.2 and a high rectification ratio of 1 x 10(9) at +/- 1.5 V. The extracted specific ON -resistance is 7.8 m Omega.mm(2), and the breakdown voltage is 26.4 V. With approximately the same Baliga's figure-of-merit as that of the single-crystal silicon counterparts, the proposed Schottky diode is therefore promising for power electronic applications.
引用
收藏
页码：4759 / 4763
页数：5
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