Growths of InGaN Quantum Wells Light-Emitting Diodes on Nano-Patterned AGOG Sapphire Substrate Using Abbreviated Growth Mode

被引：0
|
作者：
Ee, Yik-Khoon [1 ]
Biser, Jeff [2 ]
Cao, Wanjun [2 ]
Chan, Helen M. [2 ]
Vinci, Richard P. [2 ]
Tansu, Nelson [1 ]
机构：
[1] Lehigh Univ, Ctr Opt Technol, Dept Elect & Comp Engn, Bethlehem, PA 18015 USA
[2] Lehigh Univ, Ctr Adv Mat & Nanotechnol, Dept Mat Sci & Engn, Bethlehem, PA 18015 USA
来源：
2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 | 2009年
关键词：
GAN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nanoheteroepitaxy of InGaN-based light-emitting diodes on patterned AGOG sapphire by using abbreviated growth mode, leads to significant reduction in dislocation density and 24% increase in efficiency (C)2009 Optical Society of America
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页码：1361 / +
页数：2
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