Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate

被引：0
|
作者：
Yang Sheng
Chang Sheng Xia
Zhan Ming Simon Li
Li Wen Cheng
机构：
[1] Fudan University,State Key Laboratory of ASIC and System, Department of Microelectronics
[2] Crosslight Software Inc. China Branch,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics
[3] Chinese Academy of Sciences,undefined
来源：
Optical and Quantum Electronics | 2013年 / 45卷
关键词：
LED; Patterned sapphire substrate; PSS; Ray tracing; FDTD; TCAD; 3D; Numerical simulation; Apsys;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with patterned sapphire substrate (PSS) are simulated by the APSYS software. Approach of combining finite-difference time-domain (FDTD) method and raytracing technique is applied to perform light extraction. The simulation results show that PSS dramatically increases extraction efficiency of light power, in agreement with experiment. It is found that extraction efficiency can be maximized by changing the shape of PSS. This work presents a new approach to combine electrical simulation with FDTD and raytracing in 3D TCAD simulation of GaN-LED.
引用
收藏
页码：605 / 610
页数：5
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