1030 nm DBR tapered diode laser with up to 16 W of optical output power

被引：5

作者：

Mueller, A. ^{[1
]}

Zink, C. ^{[1
]}

Fricke, J. ^{[1
]}

Bugge, F. ^{[1
]}

Brox, O. ^{[1
]}

Erbert, G. ^{[1
]}

Sumpf, B. ^{[1
]}

机构：

[1] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany

来源：

NOVEL IN-PLANE SEMICONDUCTOR LASERS XVI | 2017年 / 10123卷

关键词：

Diode laser; tapered diode laser; distributed Bragg reflector; narrow bandwidth; high brightness; 2ND-HARMONIC GENERATION; GREEN LIGHT; BRIGHTNESS;

D O I：

10.1117/12.2251845

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1030 nm distributed Bragg reflector (DBR) tapered diode laser with optimized vertical layer structure and lateral design is presented. At a heatsink temperature of 15 degrees C the developed laser provides up to 16 W of optical output power. The maximum electro-optical efficiency is 57%. Intrinsic wavelength stabilization is obtained by a 7 th order DBR grating and results in a narrowband emission over the whole power range. Ion implantation next to the ridge-waveguide is applied in order to suppress propagation of unwanted lateral side modes. The highest diffraction-limited central lobe power measured for this device is 9.1 W. With these properties the presented high brightness laser is suitable for applications such as nonlinear frequency conversion.

引用

页数：7

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