Logic Gates Based on Carbon Nanotube Field-Effect Transistors with SiNx Passivation Films

被引：8

作者：

Kishimoto, Takaomi ^{[1
]}

Ohno, Yasuhide ^{[1
]}

Maehashi, Kenzo ^{[1
]}

Inoue, Koichi ^{[1
]}

Matsumoto, Kazuhiko ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 06期

基金：

日本科学技术振兴机构;

关键词：

SINGLE; CIRCUITS; DEVICES;

D O I：

10.1143/JJAP.49.06GG02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated logic gates based on complementary carbon nanotube field-effect transistors (CNT-FETs) with SiNx passivation films deposited by catalytic chemical vapor deposition. The carrier type of CNT-FETs was controlled by forming SiNx passivation films. Electrical measurements revealed that the p-type characteristics of CNT-FETs were converted to n-type characteristics after the deposition of SiNx passivation films. Then, the n-type CNT-FETs with SiNx passivation films were reconverted to p-type CNT-FETs by annealing in N-2 atmosphere. As a consequence, complementary voltage inverters comprising p-and n-type CNT-FETs with SiNx passivation films were demonstrated on the same SiO2 substrate by conventional photolithography and lift-off techniques. Moreover, the static transfer and dynamic characteristics of the CNT-FET-based inverters were investigated. It was found that a gain of approximately 3 was achieved and that the device was switched properly at frequencies of up to 100 Hz. (C) 2010 The Japan Society of Applied Physics

引用

页码：06GG021 / 06GG024

页数：4

共 50 条

[1] Electrical characterization of carbon nanotube field-effect transistors with SiNx passivation films deposited by catalytic chemical vapor deposition
Maehashi, Kenzo
Ohno, Yasuhide
Inoue, Koichi
Matsumoto, Kazuhiko
Niki, Toshikazu
Matsumura, Hideki
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (18)
[2] Carbon nanotube field-effect transistors and logic circuits
Martel, R
Derycke, V
Appenzeller, J
Wind, S
Avouris, P
[J]. 39TH DESIGN AUTOMATION CONFERENCE, PROCEEDINGS 2002, 2002, : 94 - 98
[3] Carbon Nanotube Field-Effect Transistors for Use as Pass Transistors in Integrated Logic Gates and Full Subtractor Circuits
Ding, Li
Zhang, Zhiyong
Pei, Tian
Liang, Shibo
Wang, Sheng
Zhou, Weiwei
Liu, Jie
Peng, Lian-Mao
[J]. ACS NANO, 2012, 6 (05) : 4013 - 4019
[4] Carbon nanotube field-effect transistors and logic devices.
Martel, R
Derycke, V
Appenzeller, J
Wong, PHS
Avouris, P
[J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2001, 222 : U184 - U185
[5] Hysteresis-free carbon nanotube field-effect transistors without passivation
Tittmann, J.
Hermann, S.
Schulz, S. E.
Pacheco-Sanchez, A.
Claus, M.
Schroeter, M.
Schulz, S. E.
Schroeter, M.
[J]. 2014 IEEE/ACM INTERNATIONAL SYMPOSIUM ON NANOSCALE ARCHITECTURES (NANOARCH), 2014, : 137 - +
[6] Carbon nanotube field-effect transistors
不详
[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2008, 2 (03): : A1 - A1
[7] Carbon nanotube field-effect transistors
不详
[J]. JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY, 2008, 46 (11) : A1 - A1
[8] Electric field-effect thermal transistors and logic gates
Xu, Deyu
Zhao, Junming
Liu, Linhua
[J]. INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2024, 227
[9] High-performance carbon nanotube field-effect transistors with local electrolyte gates
Katsura, Taiji
Yamamoto, Yasuki
Maehashi, Kenzo
Ohno, Yasuhide
Matsumoto, Kazuhiko
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2060 - 2063
[10] Ballistic carbon nanotube field-effect transistors
Ali Javey
Jing Guo
Qian Wang
Mark Lundstrom
Hongjie Dai
[J]. Nature, 2003, 424 : 654 - 657

← 1 2 3 4 5 →