Temperature driven Mott-Hubbard to charge-transfer insulator transition in hexagonal Sr0.6Ba0.4MnO3

被引：3

作者：

Rawat, Ritu ^{[1
]}

Jana, Anupam ^{[1
]}

Panchal, Gyanendra ^{[1
]}

Chowdhury, Sourav ^{[1
]}

Choudhary, R. J. ^{[1
]}

Phase, D. M. ^{[1
]}

机构：

[1] UGC DAE Consortium Sci Res, Indore 452001, MP, India

来源：

APPLIED PHYSICS LETTERS | 2019年 / 115卷 / 10期

关键词：

RESONANT PHOTOEMISSION; ELECTRONIC-STRUCTURE;

D O I：

10.1063/1.5113570

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have probed the electronic structure across the ferroelectric transition temperature (T-C = 355K) of hexagonal Sr0.6Ba0.4MnO3 (SBMO) which shows a magneto-electric effect at room temperature. The valence and conduction bands are characterized by resonant photoemission and X-ray absorption spectroscopy measurements, respectively. The valence band spectrum is found to be hugely modified across T-C. Above T-C, SBMO behaves like a Mott-Hubbard insulator, whereas at 300K, it shows a charge-transfer-type insulator behavior. Modulation in the hybridization of Mn-3d and O-2p orbitals due to local structural variations with temperature unravels the rational for the observed electronic structure transition vis a vis magnetic and electrical behaviors of SBMO.

引用

页数：5

共 27 条

[21] Mechanisms of photoinduced magnetization in Pr0.6Ca0.4MnO3 studied above and below charge-ordering transition temperature
Elovaara, T.
Tikkanen, J.
Granroth, S.
Majumdar, S.
Felix, R.
Huhtinen, H.
Paturi, P.
JOURNAL OF PHYSICS-CONDENSED MATTER, 2017, 29 (42)
[22] Insulator-metal transition induced by interlayer coupling in La0.6Sr0.4MnO3/SrTiO3 superlattices -: art. no. 064429
Izumi, M
Ogimoto, Y
Okimoto, Y
Manako, T
Ahmet, P
Nakajima, K
Chikyow, T
Kawasaki, M
Tokura, Y
PHYSICAL REVIEW B, 2001, 64 (06) : 644291 - 644296
[23] Electrical properties and transport mechanisms of Au/Ba0.6Sr0.4TiO3/GaN metal–insulator–semiconductor (MIS) diode at high temperature range
V. Rajagopal Reddy
Applied Physics A, 2016, 122
[24] Electrical properties and transport mechanisms of Au/Ba0.6Sr0.4TiO3/GaN metal-insulator-semiconductor (MIS) diode at high temperature range
Reddy, V. Rajagopal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2016, 122 (05):
[25] Thickness-dependent ferromagnetic metal to paramagnetic insulator transition in La0.6Sr0.4MnO3 thin films studied by x-ray magnetic circular dichroism
Shibata, G.
Yoshimatsu, K.
Sakai, E.
Singh, V. R.
Verma, V. K.
Ishigami, K.
Harano, T.
Kadono, T.
Takeda, Y.
Okane, T.
Saitoh, Y.
Yamagami, H.
Sawa, A.
Kumigashira, H.
Oshima, M.
Koide, T.
Fujimori, A.
PHYSICAL REVIEW B, 2014, 89 (23):
[26] High-pressure-induced ferroelectric phase transition in the Yb3+:Sr0.6Ba0.4Nb2O6 crystal at liquid helium temperature
Ramirez, M. O.
Bausa, L. E.
Sole, J. Garcia
Kaminska, A.
Kobyakov, S.
Suchocki, A.
PHYSICAL REVIEW B, 2006, 74 (17)
[27] Critical behavior near the paramagnetic to ferromagnetic phase transition temperature in La0.6Sr0.4MnO3 ceramic: A comparison between sol-gel and solid state process
Raoufi, T.
Ehsani, M. H.
Khoshnoud, D. Sanavi
CERAMICS INTERNATIONAL, 2017, 43 (06) : 5204 - 5215

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