Studies and Minimization of Kink Effect in SOI MOSFET Devices with SELBOX Structure

被引：5

作者：

Narayanan, M. R. ^{[1
]}

Al-Nashash, Hasan ^{[1
]}

Mazhari, Baquer ^{[1
]}

Pal, Dipankar ^{[2
]}

机构：

[1] Amer Univ Sharjah, Sharjah, U Arab Emirates

[2] BIT Mesra, Ranchi, Bihar, India

来源：

2008 INTERNATIONAL CONFERENCE ON MICROELECTRONICS | 2008年

关键词：

SOI MOSFET; Kink effect; Self heating Effect; SELBOX structure;

D O I：

10.1109/ICM.2008.5393502

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a method for reducing the kink effect observed in the I-V output characteristics of partially depleted SOI MOSFET. Selective back oxide structure with various gap lengths were used. Results obtained through numerical simulations show that Kink can be significantly reduced while preserving the advantage of lower drain-body capacitance offered by conventional SOI structure.

引用

页码：232 / +

页数：2

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