Frequency Response of MOS Devices with SELBOX Structure

被引：0

作者：

Narayanan, M. R. ^{[1
]}

Al-Nashash, Hasan ^{[1
]}

Pal, Dipankar ^{[2
]}

Chandra, Mahesh ^{[3
]}

机构：

[1] Amer Univ Sharjah, Sharjah, U Arab Emirates

[2] DAIIT, Ahmadabad, Gujarat, India

[3] B IT Mesra, Ranchi, Bihar, India

来源：

2012 16TH IEEE MEDITERRANEAN ELECTROTECHNICAL CONFERENCE (MELECON) | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper is focused on the frequency behavior of SELBOX structure. This structure is found to reduce the kink effect observed in the I-V output characteristics of partially depleted SOI MOSFETs. The modified structure uses back oxide below drain and source and also below part of the channel. Silvaco TCAD tools are used for fabrication and device simulation. The device is found to have reduced parasitic capacitances which lead to an enhancement in the frequency response. Results obtained through numerical simulations indicated that the device exhibits improved operation speeds with the elimination of Kink as observed in the conventional SOI structure.

引用

页码：1099 / 1102

页数：4

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