Yield enhancement challenges for 90nm and beyond

被引：23

作者：

Goel, H ^{[1
]}

Dance, D ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

ASCMC 2003: IEEE/SEMI (R) ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE AND WORKSHOP, PROCEEDINGS | 2003年

关键词：

yield; yield enhancement; defects; random defects; systematic defects; ITRS;

D O I：

10.1109/ASMC.2003.1194504

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper highlights that some processing issues, which typically are systematic in nature, could cause random effects due to marginality issues. High aspect ratio structures, such as contacts and via challenges are exacerbated due to high density, increased critical area, and detection limitations. Process complexity, defect free mask production, and wafer handling issues also add to the challenge of ramping yields quickly.

引用

页码：262 / 265

页数：4

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