Deposition of polycrystalline diamond films with a controlled grain size by periodic secondary nucleation

被引:6
|
作者
Linnik, S. A. [1 ]
Gaydaychuk, A. V. [1 ]
Baryshnikov, E. Y. [1 ]
机构
[1] Tomsk Polytech Univ, High Technol Phys Inst, Prospect Lenina 2a, Tomsk, Russia
关键词
Diamond films; secondary nucleation; ion bombardment; multilayer structure;
D O I
10.1016/j.matpr.2016.02.024
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper presents a new method for the synthesis of polycrystalline diamond films with a controlled grain size, based on the principle of creating a multilayer coating structure by periodic bias-induced secondary nucleation. By this technique, we synthesized diamond films with a thickness of up to 120 mu m and a grain size of up to 1 mu m. The diamond multilayer films obtained were characterized by scanning electron microscopy (SEM), Raman spectroscopy, and X-ray diffraction (XRD). The effect of different deposition parameters on nucleation density was also discussed. This method shows considerable promise for the synthesis of thick diamond coatings with low roughness and internal stress. (C) 2016 The Authors. Published by Elsevier Ltd.
引用
收藏
页码:S138 / S144
页数:7
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