Bridgman growth of GaSe crystals for nonlinear optical applications

被引：34
|
作者：
Singh, NB
Narayanan, R
Zhao, AX
Balakrishna, V
Hopkins, RH
Suhre, DR
Fernelius, NC
Hopkins, FK
Zelmon, DE
机构：
[1] Northrop Grumman Corp, Ctr Sci & Technol, ESSD, Pittsburgh, PA 15235 USA
[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[3] USAF, Wright Lab, Mat Directorate, Wright Patterson AFB, OH 45433 USA
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 49卷 / 03期
关键词：
Bridgman crystal growth; GaSe crystals; nonlinear optical crystals;
D O I：
10.1016/S0921-5107(97)00137-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have grown and fabricated single crystals of gallium selenide for nonlinear optical applications in the mid-infrared wavelength region. A numerical method involving the finite volume technique was used to optimize the crystal growth furnace configuration. Crystals were grown using the liquid encapsulated Bridgman method in a vertical geometry. The modified crystals grown in the optimized furnace temperature profile showed a second harmonic conversion coefficient (d) which was higher than that of pure GaSe crystals. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：243 / 246
页数：4
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