A novel thin gate-oxide-thickness measurement method by LDD (lightly-doped-drain)-NMOS (N-channel metal-oxide-semiconductor) transistors

被引:1
|
作者
Shih, JR [1 ]
Lee, JH
Liew, BK
Hwang, HL
机构
[1] Tsing Hua Univ, Dept Elect Engn, Hsinchu, Taiwan
[2] Taiwan Semicond Mfg Co, R&D 9, Hsinchu, Taiwan
来源
关键词
gate oxide; C-V; parasitic n-p-n bipolar; snapback; HRTEM; Fowler-Nordheim (F-N) tunneling;
D O I
10.1143/JJAP.37.L1
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, we propose a novel thin gate-oxide-thickness measurement method by using Lightly-Doped-Drain (LDD) N-Channel Metal-Oxide-Semiconductor (NMOS) snapback characteristics. For device with thin oxide 150 Angstrom similar to 60 Angstrom and optimized LDD doping profile, the drain breakdown voltage will be oxide-thickness limited, and therefore the oxide breakdown's critical-field is about 10 MV/cm. By this characteristic, as high-voltage sine waveform generator provides the necessary voltage to lead to the grounded-gate LDD-NMOS happening gate-assisted drain breakdown and drives its parasitic n-p-n bipolar turn-on. The voltage-waveform collapses immediately as the applied-voltage exceeds the critical oxide-field MV/cm. Therefore, the oxide thickness can be determined.
引用
收藏
页码:L1 / L3
页数:3
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