Distributions of substitutional and interstitial impurities in silicon ingot with different grain morphologies

被引：10

作者：

Li, Pengting ^{[1
,2
]}

Ren, Shiqiang ^{[1
,2
]}

Jiang, Dachuan ^{[1
,2
]}

Wang, Kai ^{[1
,2
]}

Li, Jiayan ^{[1
,2
]}

Tan, Yi ^{[1
,2
]}

机构：

[1] Dalian Univ Technol, Sch Mat Sci & Engn, 2 Linggong Rd, Dalian 116023, Peoples R China

[2] Key Lab Solar Energy Photovolta Syst Liaoning Pro, Dalian 116023, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2017年 / 67卷

基金：

中国国家自然科学基金;

关键词：

Directional solidification; Grain morphology; Interstitial impurity; Substitutional impurity; TRANSITION-METAL IMPURITIES; DIRECTIONAL SOLIDIFICATION; MULTICRYSTALLINE SILICON; CRYSTAL/MELT INTERFACE; REMOVAL; GROWTH; DIFFUSION; SEGREGATION; BOUNDARIES; ALUMINUM;

D O I：

10.1016/j.mssp.2017.04.026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A multicrystalline silicon ingot with columnar and irregular grains was obtained from metallurgical-grade silicon (MG-Si) by directional solidification. The segregation behaviors of substitutional and interstitial impurities in different grain morphologies have been studied. The concentration distribution of substitutional impurities (B and Al) in the silicon ingot was accord with the Scheil's equation, which depended on the grain morphology. However, the concentration distribution of interstitial impurities (Fe, Ti, Cu, and Ni) was only accord with the Scheil's equation under the columnar grains growth condition. The difference lattice sites of the impurities will result in the disparate segregation behavior of impurities for columnar and irregular grains growth, which leads to the diverse concentration distribution of substitutional and interstitial impurities in the silicon ingot. Furthermore, the transport mechanism of interstitial and substitutional impurities in front of the solid-liquid interface boundary has been revealed.

引用

页码：1 / 7

页数：7

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