Monolithic wavelength-graded VCSEL and resonance-enhanced photodetector arrays for parallel optical interconnects

被引：18

作者：

Luong, SQ ^{[1
]}

Ortiz, GG

Zhou, Y

Lu, J

Hains, CP

Cheng, JL

Hou, HQ

Vawter, GA

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 05期

关键词：

integrated optoelectronics; semiconductor laser arrays; optical array; optical communication; optical interconnections; optoelectronic devices; photodetectors; wavelength-division multiplexing;

D O I：

10.1109/68.669222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monolithic arrays of wavelength-graded vertical-cavity surface-emitting lasers (VCSEL's) and resonance-enhanced photodetectors (PD's) have been realized with the same epilayer structure using the topography-controlled enhancement and reduction of the metal-organic chemical vapor deposition (MOCVD) growth rate on a patterned substrate. The repeatability of this technique was demonstrated by using different VCSEL and resonance-enhanced photodetector (REPD) arrays from the same wafer.

引用

页码：642 / 644

页数：3

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