Effects of alloying on properties of NiSi for CMOS applications

被引：0

作者：

van Dal, M ^{[1
]}

Akheyar, A ^{[1
]}

Kittl, JA ^{[1
]}

Chamirian, O ^{[1
]}

De Potter, M ^{[1
]}

Demeurisse, C ^{[1
]}

Lauwers, A ^{[1
]}

Maex, K ^{[1
]}

机构：

[1] Philips Res Leuven, B-3001 Louvain, Belgium

来源：

SILICON FRONT-END JUNCTION FORMATION-PHYSICS AND TECHNOLOGY | 2004年 / 810卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effects of alloying Ni with Pt and Ta on silicide properties for CMOS technology have been studied. It was found that Pt is soluble in NiSi, which is in line with literature, whereas Ta segregates towards the surface during thermal treatment. Additionally, Ta retards NiSi fori-nation at low temperature. Thermal stability of NiSi on Si is improved more efficiently by alloying Ni with Pt,compared to Ta. Silicide/diffusion contact resistance is extracted using the Transmission Line Structure. In our experiments, contact resistivity appeared to be virtually unaffected with respect to the alloying element. Thermal stability on narrow poly Si structures was also improved when Ni was alloyed with Pt. Similar leakage currents for Ni and Ni(Pt) silicides on N+ and P+ junctions were obtained. The results presented in this work suggest that Pt is a better candidate as alloying element to improve NiSi thermal stability for CMOS processes than Ta.

引用

页码：153 / 158

页数：6

共 50 条

[21] NiSi polysilicon fuse reliability in 65-nm logic CMOS technology
Ang, Boon
Tumakha, Sergey
Im, Jay
Paak, Sunhom S.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2007, 7 (02) : 298 - 303
[22] NiSi polysilicon fuse reliability in 65nm logic CMOS technology
Ang, Boon
Tumakha, Sergey
Im, Jay
Paak, Sunhom
2006 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP, FINAL REPORT, 2006, : 89 - +
[23] Interaction of NiSi with dopants for metallic source/drain applications
Luo, Jun
Qiu, Zhi-Jun
Zhang, Zhen
Ostling, Mikael
Zhang, Shi-Li
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (01): : C1I1 - C1I11
[24] Structure and Optical Properties of ZnO/NiSi/Si
Ren Wei
Hao Gong
Chi Dongzhi
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (04) : H98 - H100
[25] Effects of major alloying additions on the microstructure and mechanical properties of γ-TiAl
Cheng, TT
Willis, MR
Jones, IP
INTERMETALLICS, 1999, 7 (01) : 89 - 99
[26] Effects of the main alloying elements on microstructure and properties of magnesium alloys
Zhang, S.C.
Duan, H.Q.
Cai, Q.Z.
Wei, B.K.
Lin, H.T.
Chen, W.C.
Zhuzao/Foundry, 2001, 50 (06):
[27] Effects of alloying elements on thermoelectric properties of ReSi1.75
Oh, MW
Gu, JJ
Kuwabara, K
Inui, H
THERMOELECTRIC MATERIALS 2003-RESEARCH AND APPLICATIONS, 2004, 793 : 385 - 390
[28] Processing and alloying effects on tensile and impact properties of FeAl alloys
Alexander, D.J.
Maziasz, P.J.
Wright, J.L.
Materials Science and Engineering A, 1998, 258 (1-2): : 276 - 284
[29] Processing and alloying effects on tensile and impact properties of FeAl alloys
Oak Ridge Natl Lab, Oak Ridge, United States
Mater Sci Eng A Struct Mater Prop Microstruct Process, 1-2 (276-284):
[30] Effects of Zr alloying on cohesion properties of Cu/W interfaces
Wang, Ji Wei
Fan, J. L.
Gong, H. R.
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 661 : 553 - 556

← 1 2 3 4 5 →