Fabrication and properties of optoelectronic SiGeSn alloys integrated on silicon substrates

被引：2
|
作者：
Kouvetakis, J. [1 ]
机构：
[1] Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA
来源：
2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 | 2009年
关键词：
D O I：
10.1109/LEOS.2009.5343319
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：211 / 212
页数：2
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