Fabrication and properties of optoelectronic SiGeSn alloys integrated on silicon substrates

被引:2
|
作者
Kouvetakis, J. [1 ]
机构
[1] Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA
关键词
D O I
10.1109/LEOS.2009.5343319
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:211 / 212
页数:2
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