Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss

被引：10

作者：

Liu, Jingbo ^{[1
]}

Li, Pingjian ^{[1
]}

Chen, Yuanfu ^{[1
]}

Song, Xinbo ^{[1
]}

Qi, Fei ^{[1
]}

Zheng, Binjie ^{[1
]}

He, Jiarui ^{[1
]}

Wen, Qiye ^{[1
]}

Zhang, Wanli ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

CHINESE OPTICS LETTERS | 2016年 / 14卷 / 05期

基金：

国家高技术研究发展计划(863计划); 中国国家自然科学基金;

关键词：

LARGE-AREA GRAPHENE; SPECTROSCOPY;

D O I：

10.3788/COL201614.052301

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this work, we report a broadband terahertz wave modulator based on a top-gate graphene field effect transistor with polyimide as the gate dielectric on a PET substrate. The transmission of the terahertz wave is modulated by controlling the Fermi level of graphene via the polyimide as the top- gate dielectric material instead of the traditional dielectric materials. It is found that the terahertz modulator can achieve a modulation depth of similar to 20.9% with a small operating gate voltage of 3.5 V and a low insertion loss of 2.1 dB.

引用

页数：5

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