Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss

被引:10
|
作者
Liu, Jingbo [1 ]
Li, Pingjian [1 ]
Chen, Yuanfu [1 ]
Song, Xinbo [1 ]
Qi, Fei [1 ]
Zheng, Binjie [1 ]
He, Jiarui [1 ]
Wen, Qiye [1 ]
Zhang, Wanli [1 ]
机构
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
基金
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词
LARGE-AREA GRAPHENE; SPECTROSCOPY;
D O I
10.3788/COL201614.052301
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this work, we report a broadband terahertz wave modulator based on a top-gate graphene field effect transistor with polyimide as the gate dielectric on a PET substrate. The transmission of the terahertz wave is modulated by controlling the Fermi level of graphene via the polyimide as the top- gate dielectric material instead of the traditional dielectric materials. It is found that the terahertz modulator can achieve a modulation depth of similar to 20.9% with a small operating gate voltage of 3.5 V and a low insertion loss of 2.1 dB.
引用
收藏
页数:5
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