Thermoelectric properties of and device physics based on InSb semiconductors

被引：0
|
作者：
Yamazaki, J. [1 ]
Katsumata, J. [1 ]
Kaiwa, N. [1 ]
Yamaguchi, S. [1 ]
Yamamoto, A. [1 ]
机构：
[1] Kanagawa Univ, Dept Elect Elect & Informat Engn, Kanagawa Univ, 3-27-1 Rokkakubashi, Yokohama, Kanagawa 2218686, Japan
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
InSb; thermoelectric;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The thermoelectric properties of InSb were studied. A miniaturized InSb-based thermoelectric device was designed and fabricated. Maximum of output voltage and output power were 6.1mV and 2 mu W, respectively, at Delta T=100K.
引用
收藏
页码：1387 / +
页数：2
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