Double-resonance spectroscopy of InAs/GaAs self-assembled quantum dots

被引：22
|
作者：
Murdin, BN [1 ]
Hollingworth, AR
Barker, JA
Clarke, DG
Findlay, PC
Pidgeon, CR
Wells, JPR
Bradley, IV
Malik, S
Murray, R
机构：
[1] Univ Surrey, Dept Phys, Guildford GU2 7XH, Surrey, England
[2] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland
[3] FOM Inst Rijnhuizen, NL-3430 BE Nieuwegein, Netherlands
[4] Univ London Imperial Coll Sci Technol & Med, Ctr Elect Mat & Devices, London SW7 2BZ, England
来源：
PHYSICAL REVIEW B | 2000年 / 62卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.62.R7755
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present far-/near-infrared double resonance measurements of self-assembled InAs/GaAs quantum dots. The far-infrared resonance is unambiguously associated with a bound-bound intraband transition in the neutral dots. The results show that the interband photoluminescence (PL) lines originate from conduction levels with successively increasing in-plane quantum numbers. We determine the confinement energies for both electrons and holes in the same dots. Furthermore, we show that the inhomogeneous broadening of the PL cannot be attributed solely to size and composition fluctuation.
引用
收藏
页码：R7755 / R7758
页数：4
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