Optically detected intersublevel resonance in InAs/GaAs self-assembled quantum dots

被引：0
|
作者：
Murdin, BN [1 ]
Hollingworth, AR
Barker, J
Findlay, PC
Pidgeon, CR
Wells, JP
Bradley, IV
Knippels, G
Murray, R
机构：
[1] Univ Surrey, Dept Phys, Guildford GU2 5XH, Surrey, England
[2] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland
[3] EURATOM, FOM, Inst Rijnhuizen, NL-3430 BE Nieuwegein, Netherlands
[4] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Ctr Elect Mat & Devices, London SW7 2BZ, England
来源：
PHYSICA B | 1999年 / 272卷 / 1-4期
基金：
英国工程与自然科学研究理事会;
关键词：
quantum dots; intraband resonance;
D O I：
10.1016/S0921-4526(99)00232-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We present two-colour pump-probe measurements of the intraband absorption in low growth rate, self-assembled InAs/GaAs quantum dots. The far-infrared resonance observed is unambiguously associated with the dots, and not related to the surrounding material. The results also imply that the interband photoluminescence lines, which appear under high excitation, are from conduction band levels with successively increasing in-plane quantum number. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：5 / 7
页数：3
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