Efficient intersubband scattering via carrier-carrier interaction in quantum wells

被引:43
|
作者
Hartig, M [1 ]
Haacke, S
Selbmann, PE
Deveaud, B
Taylor, RA
Rota, L
机构
[1] Swiss Fed Inst Technol, IMO, Dept Phys, CH-1015 Lausanne, Switzerland
[2] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
关键词
D O I
10.1103/PhysRevLett.80.1940
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Using femtosecond resonant luminescence, we have measured the intersubband scattering fare of electrons in wide GaAs quantum wells at very low excitation densities. Even when the spacing between the first two electron subbands is smaller than the LO phonon energy, we observe that intersubband scattering is a subpicosecond process, much faster than previously measured or anticipated. Our experimental results are in perfect agreement with Monte Carlo calculations, which show that carrier-carrier interaction is responsible for the ultrafast transitions.
引用
收藏
页码:1940 / 1943
页数:4
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