INFLUENCE OF THE CARRIER DISTRIBUTION ON CARRIER-CARRIER SCATTERING IN GAAS

被引:7
|
作者
KASH, JA
机构
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 07期
关键词
D O I
10.1103/PhysRevB.51.4680
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Hot electrons in GaAs in the presence of a highly nonequilibrium plasma generated by a 150-fs laser pulse are shown to have an energy-loss rate to the plasma that is two to four times higher than a hot electron in the presence of a cooler, thermalized plasma of the same density. The increased energy-loss rate due to the nonequilibrium plasma is consistent with the reduced screening that has been predicted for such a plasma. In addition, the linewidth of the hot acceptor luminescence peak, which is used to measure the energy-loss rate, is found to be constant under fs laser excitation as the injected carrier density is increased up to about 2×1016 cm-3. This finding disagrees with a recent prediction. Possible reasons for the disagreement are considered. © 1995 The American Physical Society.
引用
收藏
页码:4680 / 4683
页数:4
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