Guidelines for a Reliable Analysis of Random Telegraph Noise in Electronic Devices

被引:23
|
作者
Puglisi, Francesco Maria [1 ]
Pavan, Paolo [1 ]
机构
[1] Univ Modena & Reggio Emilia, Dipartimento Ingn Enzo Ferrari, I-41125 Modena, Italy
关键词
Factorial hidden Markov model (FHMM); noise analysis; noise measurement; random telegraph noise (RTN); trap spectroscopy; RTS NOISE; RRAM; EXTRACTION;
D O I
10.1109/TIM.2016.2518880
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we propose new guidelines for the analysis of random telegraph noise (RTN) in electronic devices. Starting from an in-depth understanding of RTN signal characteristics, we will identify the correct measurement conditions to enable RTN analysis as a characterization tool for electronic devices. The estimate of RTN statistical parameters may indeed strongly depend on the choice of measurement conditions. We will carefully consider both the measurement limits and the extraction process constraints to devise a strategy to identify RTN signals measured in conditions allowing a meaningful estimation of their parameters. The proposed strategy will be tested on a variety of different RTN signals and operating conditions.
引用
收藏
页码:1435 / 1442
页数:8
相关论文
共 50 条
  • [1] ON 1/F NOISE AND RANDOM TELEGRAPH NOISE IN VERY SMALL ELECTRONIC DEVICES
    KLEINPENNING, TGM
    [J]. PHYSICA B, 1990, 164 (03): : 331 - 334
  • [2] Random telegraph noise (RTN) in scaled RRAM devices
    Veksler, D.
    Bersuker, G.
    Vandelli, L.
    Padovani, A.
    Larcher, L.
    Muraviev, A.
    Chakrabarti, B.
    Vogel, E.
    Gilmer, D. C.
    Kirsch, P. D.
    [J]. 2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2013,
  • [3] Resistive Switching Devices Producing Giant Random Telegraph Noise
    Becker, Thales
    Li, Xuehua
    Moser, Eduardo
    Alves, Pedro
    Wirth, Gilson
    Lanza, Mario
    [J]. IEEE ELECTRON DEVICE LETTERS, 2022, 43 (01) : 146 - 149
  • [4] Random telegraph noise of junction leakage current in submicron devices
    Mori, Yuki
    Takeda, Kenichi
    Yamada, Ren-ichi
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 107 (01)
  • [5] Random Telegraph Signal Noise in Phase Change Memory Devices
    Fugazza, Davide
    Ielmini, Daniele
    Lavizzari, Simone
    Lacaita, Andrea L.
    [J]. 2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2010, : 743 - 749
  • [6] Random telegraph noise analysis in time domain
    Yuzhelevski, Y
    Yuzhelevski, M
    Jung, G
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2000, 71 (04): : 1681 - 1688
  • [7] Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators
    Zanotti, Tommaso
    Ranjan, Alok
    O'Shea, Sean J.
    Raghavan, Nagarajan
    Thamankar, Ramesh
    Pey, Kin Leong
    Puglisi, Francesco Maria
    [J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 24 (02) : 184 - 193
  • [8] Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS
    Puglisi, Francesco Maria
    Pavan, Paolo
    Larcher, Luca
    Padovani, Andrea
    [J]. SOLID-STATE ELECTRONICS, 2015, 113 : 132 - 137
  • [9] New Insights into the Amplitude of Random Telegraph Noise in Nanoscale MOS Devices
    Zhang, Zexuan
    Guo, Shaofeng
    Jiang, Xiaobo
    Wang, Runsheng
    Zhang, Zhe
    Hao, Peng
    Wang, Yangyuan
    Huang, Ru
    [J]. 2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2017,
  • [10] Random Telegraph Signal Noise in Advanced High Performance and Memory Devices
    Claeys, C.
    de Andrade, M. G. C.
    Chai, Z.
    Fang, W.
    Govoreanu, B.
    Kaczer, B.
    Zhang, W.
    Simoen, E.
    [J]. 2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 2016,