Anomalous behavior in spin dependent tunnel junctions

被引：0
|
作者：
Platt, CL [1 ]
Dieny, B [1 ]
Berkowitz, AE [1 ]
机构：
[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
来源：
MAGNETIC ULTRATHIN FILMS, MULTILAYERS AND SURFACES - 1997 | 1997年 / 475卷
关键词：
D O I：
10.1557/PROC-475-545
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Spin dependent tunneling has been investigated in tunnel junctions composed of a variety of materials. The best results thus far have been with either HfO2 or MgO as the barrier layer using CoFe, Fe, or Co as the magnetic electrodes. The maximum magnetoresistive (MR) response of these junctions has been at low temperatures on the order of 30% in HfO2 and 20% in MgO. We have also observed a variety of anomalous behavior in some of our tunnel junctions at low temperature. These include MR effects dependent on the angle of orientation of the tunnel junction in the applied magnetic field, transition fields greater than 10kOe, and negative MR effects on the order of 2%.
引用
收藏
页码：545 / 550
页数：6
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