Silicon carbide nanowires: synthesis and cathodoluminescence

被引：30

作者：

Huczko, Andrzej ^{[1
]}

Dabrowska, Agnieszka ^{[1
]}

Savchyn, Volodymyr ^{[2
]}

Popov, Anatoli I. ^{[3
,4
]}

Karbovnyk, Ivan ^{[2
]}

机构：

[1] Warsaw Univ, Dept Chem, PL-02093 Warsaw, Poland

[2] Ivan Franko Natl Univ Lviv, Dept Elect, UA-79017 Lvov, Ukraine

[3] Inst Max Von Laue Paul Langevin, F-38042 Grenoble, France

[4] Latvian State Univ, Inst Solid State Phys, LV-1063 Riga, Latvia

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2009年 / 246卷 / 11-12期

关键词：

PHOTOLUMINESCENCE; NANOSTRUCTURES; LUMINESCENCE; DEFECTS;

D O I：

10.1002/pssb.200982321

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Silicon carbide nanowires have been synthesized via a combustion synthesis route. Structural studies showed that obtained SiC nanowires belong dominantly to 3C polytype with zinc-blend structure. Cathodoluminescence spectra from these nanostructures within the temperature range of 77 ... 300 K, show obvious differences with respect to the bulk materials. The exciton band of the bulk 3C-SiC is significantly damped and the prevailing line is found to be at 1.99 eV (77 K), proving the key role of defect centers in optical properties of the investigated nanomaterial. [GRAPHICS] Purified SiC nanowires (C). 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2806 / 2808

页数：3

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