CATHODOLUMINESCENCE OF SILICON-CARBIDE

被引：1
|
作者：
SODOMKA, L
机构：
来源：
CZECHOSLOVAK JOURNAL OF PHYSICS | 1978年 / 28卷 / 02期
关键词：
D O I：
10.1007/BF01591044
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：233 / 236
页数：4
相关论文
共 50 条
  • [1] CATHODOLUMINESCENCE OF SILICON-CARBIDE DOPED WITH BORON AND NITROGEN
    ANDREEV, AP
    VIOLIN, EE
    TAIROV, YM
    FAYANS, OA
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (02): : 208 - 210
  • [2] CATHODOLUMINESCENCE OF SCANDIUM-DOPED SILICON-CARBIDE
    ANDREEV, AP
    VIOLIN, EE
    TAIROV, YM
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (08): : 1056 - 1057
  • [3] Cathodoluminescence of diamond synthesized from silicon-carbide
    洪时明
    KANDA Hisao
    芶立
    [J]. Science Bulletin, 1996, (03) : 208 - 212
  • [4] Cathodoluminescence of diamond synthesized from silicon-carbide
    Hong, SM
    Kanda, H
    Li, G
    [J]. CHINESE SCIENCE BULLETIN, 1996, 41 (03): : 208 - 212
  • [5] CATHODOLUMINESCENCE MEASUREMENTS ON A SILICON-CARBIDE LIGHT-EMITTING DIODE
    POTTER, RM
    [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) : 721 - +
  • [6] CATHODOLUMINESCENCE OF SILICON-CARBIDE STRUCTURES FORMED BY IMPLANTATION OF ALUMINUM IONS
    ANDREEV, AP
    VIOLIN, EE
    DEMAKOV, KD
    TAIROV, YM
    UDALTSOV, VE
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (01): : 119 - 120
  • [7] CATHODOLUMINESCENCE OF SILICON-CARBIDE CONTAINING IMPLANTED NITROGEN AND OXYGEN IONS
    KODRAU, NV
    MAKAROV, VV
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (05): : 569 - 570
  • [8] SILICON-CARBIDE PLATELET SILICON-CARBIDE COMPOSITES
    MITCHELL, T
    DEJONGHE, LC
    MOBERLYCHAN, WJ
    RITCHIE, RO
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1995, 78 (01) : 97 - 103
  • [9] SILICON-CARBIDE
    AULT, NN
    CROWE, JT
    [J]. AMERICAN CERAMIC SOCIETY BULLETIN, 1994, 73 (06): : 125 - 127
  • [10] SILICON-CARBIDE
    AULT, NN
    CROWE, JT
    [J]. AMERICAN CERAMIC SOCIETY BULLETIN, 1989, 68 (05): : 1062 - 1063
12345