Infiltration of Al2O3/Y2O3 and AlN/Y2O3 mixes into SiC preforms

被引:5
|
作者
Taguchi, S. P. [1 ]
Ribeiro, S. [1 ]
Balestra, R. M. [1 ]
Rodrigues, D., Jr. [1 ]
机构
[1] Univ Sao Paulo, EEL, DEMAR, Polo Urbo Ind, BR-12600970 Lorena, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
infiltration; ceramic; SiC; elemental mapping;
D O I
10.1016/j.msea.2006.10.083
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This work shows the behavior of Al2O3/Y2O3 and AlN/Y2O3 melts during infiltration of porous silicon carbide (SiC) preforms. Preforms were placed on plates from Al2O3/Y2O3 or AlN/Y2O3 and set into graphite crucibles. These samples were heated up to the melting points of the mixes: 1870 degrees C for 5 and 10 min for Al2O3/Y2O3 mix infiltrates, and 1940 degrees C for 5 and 2.5 min for AlN/Y2O3 mix infiltrates. After infiltration the samples were cut in the longitudinal sections and analyzed using scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS) X-ray elemental mapping. It was observed that AlN/Y2O3 melt infiltrated faster than Al2O3/Y2O3 melt. The infiltration was fully analyzed in all samples. (c) 2007 Published by Elsevier B.V.
引用
收藏
页码:24 / 29
页数:6
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