Atomistic Simulations of dislocation-interface interactions in thin films

被引：0
|
作者：
Leger, RW [1 ]
Shen, YL [1 ]
机构：
[1] Univ New Mexico, Dept Engn Mech, Albuquerque, NM 87131 USA
来源：
NANOSCALE MATERIALS AND MODELING-RELATIONS AMONG PROCESSING, MICROSTRUCTURE AND MECHANICAL PROPERTIES | 2004年 / 821卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Atomistic simulations are carried out to study the effect of atomic sliding capability at the interface between a plastically deforming film and a stiff substrate. Molecular statics modeling is utilized to corroborate the overall film response and the nano-scale defect mechanisms. A free-sliding interface is shown to be able to cause "reflection" of oncoming dislocations and enhance film plasticity. A rigidly bonded interface, on the other hand, is seen to resist approaching dislocations. Partial sliding results in a transitional behavior between the two extremes, as revealed in our parametric analysis. The sliding capability of interface atoms is also seen to dictate the overall film response.
引用
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页码：209 / 214
页数：6
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