High-mobility low-temperature ZnO transistors with low-voltage operation

被引：114

作者：

Bong, Hyojin ^{[1
]}

Lee, Wi Hyoung ^{[1
]}

Lee, Dong Yun ^{[1
]}

Kim, Beom Joon ^{[2
]}

Cho, Jeong Ho ^{[2
]}

Cho, Kilwon ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Polymer Res Inst, Dept Chem Engn, Pohang 790784, Kyungbuk, South Korea

[2] Soongsil Univ, Dept Organ Mat & Fiber Engn, Seoul 156743, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 19期

关键词：

carrier mobility; dielectric materials; flexible electronics; gels; II-VI semiconductors; semiconductor thin films; sintering; sol-gel processing; thin film transistors; zinc compounds; THIN-FILM TRANSISTORS; GATE DIELECTRICS; POLYMER; CIRCUITS;

D O I：

10.1063/1.3428357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low voltage high mobility n-type thin film transistors (TFTs) based on sol-gel processed zinc oxide (ZnO) were fabricated using a high capacitance ion gel gate dielectric. The ion gel gated solution-processed ZnO TFTs were found to exhibit excellent electrical properties. TFT carrier mobilities were 13 cm(2)/V s, ON/OFF current ratios were 10(5), regardless of the sintering temperature used for the preparation of the ZnO thin films. Ion gel gated ZnO TFTs are successfully demonstrated on plastic substrates for the large area flexible electronics. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428357]

引用

页数：3

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