TCAD simulation methodology for electrothermal analysis of discrete devices including package

被引：0

作者：

Nallet, Franck ^{[1
]}

Silvestri, Luca ^{[1
]}

Cilento, Tommaso ^{[1
]}

Yun, Chan-Su ^{[2
]}

Holland, Steffen ^{[3
]}

Roever, Martin ^{[3
]}

机构：

[1] Synopsys Switzerland LLC, Zurich, Switzerland

[2] Synopsys Inc, Mountain View, CA 94043 USA

[3] NXP Semicond Germany GmbH, Hamburg, Germany

来源：

2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD) | 2014年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, three methodologies for fully coupled rigorous electrothermal simulation of discrete devices including the package are proposed. The first one is based on full 3D modeling using TCAD tools applied to a simple BJT. The second approach, using combined 2D/3D modeling, is applied to a multiple-stripe BJT design that reduces the computation time by a factor of 10 while maintaining a reasonable accuracy. In the third approach we propose a smart coupling between the device and the package that combines the speed and accuracy of mixed-mode and couples temperature non-uniformity to the active device electrothermal behavior.

引用

页码：334 / 337

页数：4

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