Advanced Methodology for Fast 3-D TCAD Device/Circuit Electrothermal Simulation and Analysis of Power HEMTs

被引:31
|
作者
Chvala, Ales [1 ]
Donoval, Daniel [1 ]
Satka, Alexander [1 ]
Molnar, Marian [1 ]
Marek, Juraj [1 ]
Pribytny, Patrik [1 ]
机构
[1] Slovak Univ Technol Bratislava, Inst Elect & Photon, Bratislava 81245, Slovakia
关键词
3-D electrothermal simulation; high-electron mobility transistor (HEMT) equivalent circuit model; power HEMT; TCAD modeling; ALGAN/GAN; GAN; TRANSISTORS; MODEL;
D O I
10.1109/TED.2015.2395251
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper introduces an advanced methodology for fast 3-D Technology Computer Aided Design (TCAD) electrothermal simulation for the analysis of power devices. The proposed methodology is based on coupling finite element method (FEM) thermal and circuit electrical simulation in a mixed-mode setup. A power InAlN/GaN high-electron mobility transistor (HEMT) is used to perform validation of the designed electrothermal simulation. A new equivalent temperature-dependent nonlinear analytical large signal circuit model of HEMT is proposed. The model is implemented to Synopsys TCAD Sentaurus using compact model interface. The designed electrothermal simulation methodology is developed to shorten the simulation time for complex 3-D devices. This approach combines the speed and accuracy, and couples temperature nonuniformity to the active device electrothermal behavior. The simulation results are compared with the measured data and results of 2-D FEM simulations. The features and limitations of the methods are analyzed and presented.
引用
收藏
页码:828 / 834
页数:7
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