TCAD Simulation Methodology for Full 3-D Electro-Physical and Advanced Thermal Analysis of Power Modules

被引：0
|
作者：
Pribytny, Patrik [1 ]
Chvala, Ales [1 ]
Marek, Juraj [1 ]
Donoval, Daniel [1 ]
机构：
[1] Slovak Univ Technol Bratislava, Inst Elect & Photon, Bratislava, Slovakia
来源：
2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017) | 2017年
关键词：
power diode; 3-D numerical modeling and simulation; thermal management; power and heat dissipation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High reliability and performance of power semiconductor devices depends on an optimized design based on a good understanding of their electro-thermal behavior and influence of parasitic components on their operation. In this paper we present the analysis and the geometry optimization of the high power PIN diode structure supported by the advanced full 3-D mixed mode electro-thermal device and circuit simulation. Lowering the operation temperature by better power management and heat dissipation related to optimized structure design will allow withstanding of higher current pulses and suppressing the damage of the analyzed structure by thermal breakdown. The structure under investigation is a P+ NN+ power diode packaged in power module. It is designed for reverse voltages up to 1800V and high forward currents up to 100 A with maximum forward surge current up to 2,7 kA
引用
收藏
页码：249 / 252
页数：4
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