Assignment of reflectance difference spectroscopy peaks to II-VI surface layers

Using reflectance difference spectroscopy, we investigate in situ the interface and surface anisotropies and bonding conditions of molecular beam epitaxial grown ZnSe and CdTe layers using GaAs (0 0 1) as substrate, simultaneously characterized by reflection high-energy electron diffraction. The thermally cleaned GaAs (0 0 1) surface shows typically a (4 x 6) reconstruction. In this work we tackle the problem of assigning spectral features in reflectance difference spectroscopy to specific surface terminations. One major goal is to determine the difference between topmost cation and anion layers. (C) 1998 Published by Elsevier Science B.V. All rights reserved.