Aggregation of P3HT as a preferred pathway for its chemical doping with F4-TCNQ

被引:22
|
作者
Tang, Kan [1 ]
McFarland, Frederick M. [1 ]
Travis, Skye [1 ]
Lim, Jasmine [2 ]
Azoulay, Jason D. [2 ]
Guo, Song [1 ]
机构
[1] Univ Southern Mississippi, Dept Chem & Biochem, Hattiesburg, MS 39406 USA
[2] Univ Southern Mississippi, Sch Polymer Sci & Engn, Hattiesburg, MS 39406 USA
基金
美国国家科学基金会;
关键词
FIELD-EFFECT TRANSISTORS; ATOMIC-FORCE MICROSCOPY; CHARGE-TRANSFER; ORGANIC TRANSISTORS; INTEGRATED-CIRCUITS; FILM MORPHOLOGY; THIN-FILMS; POLY(3-HEXYLTHIOPHENE); POLYMER; CRYSTALLIZATION;
D O I
10.1039/c8cc05472j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The chemical doping reaction of P3HT with F-4-TCNQ was studied by optical absorption spectroscopy, atomic force microscopy, and Kelvin probe force microscopy. We demonstrate that P3HT aggregation preferentially occurs before the actual charge transfer step takes place, emphasizing the impact of morphology on the chemical doping reaction of conjugated polymers at the molecular level.
引用
收藏
页码:11925 / 11928
页数:4
相关论文
共 50 条
  • [1] F4TCNQ Doping of P3HT:PCBM Photovoltaic Devices
    Fujita, Hiroyuki
    Yuan, Yuping
    Michinobu, Tsuyoshi
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2011, 24 (03) : 311 - 315
  • [2] F4-TCNQ concentration dependence of the current voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si(MPS) Schottky barrier diode
    E.Yaglioglu
    O.Tzn Ozmen
    Chinese Physics B, 2014, 23 (11) : 516 - 526
  • [3] F4-TCNQ concentration dependence of the current-voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode
    Yaglioglu, E.
    Ozmen, O. Tuzun
    CHINESE PHYSICS B, 2014, 23 (11)
  • [4] p-type doping of graphene with F4-TCNQ
    Pinto, H.
    Jones, R.
    Goss, J. P.
    Briddon, P. R.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (40)
  • [5] Comprehensive picture of p-type doping of P3HT with the molecular acceptor F4TCNQ
    Pingel, P.
    Neher, D.
    PHYSICAL REVIEW B, 2013, 87 (11):
  • [6] Correlation of dopant solution on doping mechanism and performance of F4TCNQ-doped P3HT
    He, Jiaxin
    Shan, Hongtao
    Zhu, Bingyan
    Cao, Xueting
    Zhou, Jianjun
    Huo, Hong
    JOURNAL OF POLYMER SCIENCE, 2024, 62 (22) : 4993 - 5003
  • [7] Optical Dedoping Mechanism for P3HT:F4TCNQ Mixtures
    Fuzell, Jack
    Jacobs, Ian E.
    Ackling, Sophia
    Harrelson, Thomas F.
    Huang, David M.
    Larsen, Delmar
    Moule, Adam J.
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2016, 7 (21): : 4297 - 4303
  • [8] Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode
    İ. Taşçıoğlu
    Ö. Tüzün Özmen
    H. M. Şağban
    E. Yağlıoğlu
    Ş. Altındal
    Journal of Electronic Materials, 2017, 46 : 2379 - 2386
  • [9] Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode
    Tascioglu, I.
    Ozmen, O. Tuzun
    Sagban, H. M.
    Yaglioglu, E.
    Altindal, S.
    JOURNAL OF ELECTRONIC MATERIALS, 2017, 46 (04) : 2379 - 2386
  • [10] Thermally Induced Formation of HF4TCNQ- in F4TCNQ-Doped Regioregular P3HT
    Watts, Kristen E.
    Neelamraju, Bharati
    Moser, Maximilian
    McCulloch, Iain
    Ratcliff, Erin L.
    Pemberton, Jeanne E.
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2020, 11 (16): : 6586 - 6592