p-type doping of graphene with F4-TCNQ

被引：122
|
作者：
Pinto, H. [1 ]
Jones, R. [1 ]
Goss, J. P. [2 ]
Briddon, P. R. [2 ]
机构：
[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England
[2] Univ Newcastle, Sch Elect Elect & Comp Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2009年 / 21卷 / 40期
关键词：
D O I：
10.1088/0953-8984/21/40/402001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We use local density function theory to study the electronic properties of tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) deposited on a graphene surface. We show that charge transfer of 0.3 holes/molecule between graphene and F4-TCNQ occurs, which makes graphene p-type doped. These results are in agreement with experimental findings on F4-TCNQ.
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页数：3
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