ALD Encapsulation of CVD WS2 for Stable and High-Performance FET Devices

被引：2

作者：

Wu, Xiangyu ^{[1
]}

Lin, Dennis ^{[1
]}

Cott, Daire ^{[1
]}

De Marneffe, Jean-Francois ^{[1
]}

Groven, Benjamin ^{[1
]}

Sergeant, Stephanie ^{[1
]}

Shi, Yuanyuan ^{[1
]}

Smets, Quentin ^{[1
]}

Sutar, Surajit ^{[1
]}

Asselberghs, Inge ^{[1
]}

Radu, Iuliana ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

来源：

2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年

关键词：

D O I：

10.1109/EDTM50988.2021.9420940

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Processing and characterization of double gate CVD WS2 devices are presented in this work. By combining H-2 plasma cleaning and trimethylaluminium (TMA) soak initiated ALD process, double gate (DG) WS2 devices with clean and high-quality interface is obtained, leading to significant improvement in hysteresis and mobility as compared with uncapped devices. Double gate modulation is demonstrated, showing enhanced gate control and better I-on as compared with single gate operation.

引用

页数：3

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