Fabrication of ZnO thin film diode using laser annealing

被引：140
|
作者：
Lee, SY [1 ]
Shim, ES [1 ]
Kang, HS [1 ]
Pang, SS [1 ]
Kang, JS [1 ]
机构：
[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
来源：
THIN SOLID FILMS | 2005年 / 473卷 / 01期
关键词：
ZnO; laser annealing; PLD; P-n junction; light-emitting diode;
D O I：
10.1016/j.tsf.2004.06.194
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A p-n homojunction was obtained by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film. The deposition process of ZnO and Zn3P2 thin film was performed by pulsed laser deposition (PLD). A p-n junction was formed by Nd:YAG laser annealing of Zn3P2/n-ZnO thin film and showed typical I-V characteristics of a diode. Laser annealing could be a useful technique for the fabrication of an ultraviolet light-emitting diode or an ultraviolet laser diode. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：31 / 34
页数：4
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