Angular-dependent oscillations of the magnetoresistance in Bi2Se3 due to the three-dimensional bulk Fermi surface

被引：172

作者：

Eto, Kazuma ^{[1
]}

Ren, Zhi ^{[1
]}

Taskin, A. A. ^{[1
]}

Segawa, Kouji ^{[1
]}

Ando, Yoichi ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 19期

关键词：

SINGLE DIRAC CONE; TOPOLOGICAL-INSULATOR; TRANSPORT; METALS; STATES; BI2TE3;

D O I：

10.1103/PhysRevB.81.195309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We observed pronounced angular-dependent magnetoresistance (MR) oscillations in a high-quality Bi2Se3 single crystal with the carrier density of 5 x 10(18) cm(-3), which is a topological insulator with residual bulk carriers. We show that the observed angular-dependent oscillations can be well simulated by using the parameters obtained from the Shubnikov-de Haas oscillations, which clarifies that the oscillations are essentially due to the bulk Fermi surface. By completely elucidating the bulk oscillations, this result paves the way for distinguishing the two-dimensional surface state in angular-dependent MR studies in Bi2Se3 with much lower carrier density. Besides, the present result provides a compelling demonstration of how the Landau quantization of a closed three-dimensional Fermi surface can give rise to pronounced angular-dependent MR oscillations.

引用

页数：5

共 50 条

[31] Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3
Kim, Dohun
Cho, Sungjae
Butch, Nicholas P.
Syers, Paul
Kirshenbaum, Kevin
Adam, Shaffique
Paglione, Johnpierre
Fuhrer, Michael S.
NATURE PHYSICS, 2012, 8 (06) : 459 - 463
[32] Bulk Fermi surface coexistence with Dirac surface state in Bi2Se3: A comparison of photoemission and Shubnikov-de Haas measurements
Analytis, James G.
Chu, Jiun-Haw
Chen, Yulin
Corredor, Felipe
McDonald, Ross D.
Shen, Z. X.
Fisher, Ian R.
PHYSICAL REVIEW B, 2010, 81 (20):
[33] Hexagonally Deformed Fermi Surface of the 3D Topological Insulator Bi2Se3
Kuroda, K.
Arita, M.
Miyamoto, K.
Ye, M.
Jiang, J.
Kimura, A.
Krasovskii, E. E.
Chulkov, E. V.
Iwasawa, H.
Okuda, T.
Shimada, K.
Ueda, Y.
Namatame, H.
Taniguchi, M.
PHYSICAL REVIEW LETTERS, 2010, 105 (07)
[34] A MICROSCOPIC CALCULATION OF THE ANGULAR-DEPENDENT OSCILLATORY MAGNETORESISTANCE IN QUASI-2-DIMENSIONAL SYSTEMS
KURIHARA, Y
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1992, 61 (03) : 975 - 982
[35] Coherent control over three-dimensional spin polarization for the spin-orbit coupled surface state of Bi2Se3
Kuroda, Kenta
Yaji, Koichiro
Nakayama, M.
Harasawa, A.
Ishida, Y.
Watanabe, S.
Chen, C. -T.
Kondo, T.
Komori, F.
Shin, S.
PHYSICAL REVIEW B, 2016, 94 (16)
[36] Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3 under high pressure
Segura, A.
Panchal, V.
Sanchez-Royo, J. F.
Marin-Borras, V.
Munoz-Sanjose, V.
Rodriguez-Hernandez, P.
Munoz, A.
Perez-Gonzalez, E.
Manjon, F. J.
Gonzalez, J.
PHYSICAL REVIEW B, 2012, 85 (19)
[37] SEMICLASSICAL INTERPRETATION OF THE ANGULAR-DEPENDENT OSCILLATORY MAGNETORESISTANCE IN QUASI-2-DIMENSIONAL SYSTEMS
YAGI, R
IYE, Y
OSADA, T
KAGOSHIMA, S
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1990, 59 (09) : 3069 - 3072
[38] g-factors of conduction electrons and holes in Bi2Se3 three-dimensional topological insulator
Wolos, A.
Szyszko, S.
Drabinska, A.
Kaminska, M.
Strzelecka, S. G.
Hruban, A.
Materna, A.
Piersa, M.
Borysiuk, J.
Sobczak, K.
Konczykowski, M.
PHYSICAL REVIEW B, 2016, 93 (15)
[39] Theoretical study of x-ray absorption of three-dimensional topological insulator Bi2Se3
Lee, Hyun C.
PHYSICAL REVIEW B, 2011, 83 (19):
[40] Charging Dirac States at Antiphase Domain Boundaries in the Three-Dimensional Topological Insulator Bi2Se3
Liu, Y.
Li, Y. Y.
Gilks, D.
Lazarov, V. K.
Weinert, M.
Li, L.
PHYSICAL REVIEW LETTERS, 2013, 110 (18)

← 1 2 3 4 5 →