Dosage modeling for deep x-ray lithography application

被引：3
|
作者：
Shih, WP [1 ]
Hwang, GJ
Shew, BY
Cheng, Y
机构：
[1] Natl Tsing Hua Univ, Dept Power Mech Engn, Hsinchu, Taiwan
[2] Synchrotron Radiat Res Ctr, Hsinchu, Taiwan
来源：
MICROSYSTEM TECHNOLOGIES | 1998年 / 4卷 / 02期
关键词：
Multiple Exposure; Exposure Parameter; Dosage Model; Exposure Process; Analytical Dosage;
D O I：
10.1007/s005420050101
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A analytical dosage model was established to study exposure parameters of deep x-ray lithography systematically. It provided a reasonable guild line for deciding exposure parameters, selecting masks and filters in radiating process, Calculated results showed a good agreement with experiment results. Both of the single and multiple exposure processes were investigated In present study.
引用
收藏
页码：82 / 85
页数：4
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