X-Ray masks for very deep X-Ray lithography

被引:0
|
作者
J. Klein
H. Guckel
D. P. Siddons
E. D. Johnson
机构
[1] Department of Electrical and Computer Engineering,
[2] University of Wisconsin,undefined
[3] Madison WI 53706-1691,undefined
[4] USA,undefined
[5] National Synchrotron Light Source,undefined
[6] Brookhaven National Laboratory,undefined
[7] Upton,undefined
[8] NY 11973,undefined
[9] USA,undefined
来源
关键词
Radiation; Aspect Ratio; Photon Energy; Synchrotron Radiation; High Aspect Ratio;
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学科分类号
摘要
 The high aspect ratio, deep x-ray lithography and electrodeposition process [Becker et al. (1986)] can be expensive unless throughput is high enough. The use of a very high energy synchrotron has allowed the cost of exposure to be significantly reduced through simultaneous exposure of stacked photoresist [Guckel et al (1994)]. Synchrotron radiation at high photon energies has resulted the use of a large area x-ray mask. Both stacked exposures and a large area x-ray masks have significantly increased the throughput of the deep x-ray lithography and electrodeposition process.
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页码:70 / 73
页数:3
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