σ-bond expression for an analytic bond-order potential:: Including π and on-site terms in the fourth moment

被引:6
|
作者
Kuhlmann, Volker [1 ]
Scheerschmidt, Kurt [1 ]
机构
[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
关键词
D O I
10.1103/PhysRevB.76.014306
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An improved expression for sigma bonds in sp-valent systems is derived for the analytical bond-order potential to four levels. The enhancement concerns the evaluation of the fourth moment of the local density of states with on-site and pi terms. The latter introduce a torsional stiffness to the sigma-bond order, previously known only for the pi-bond order. The relative strength of the pi enhancement as compared to the pure sigma terms depends on the ratio of the pi- and sigma-bond integrals of the specific system. In the cubic diamond phase it is large for silicon (48%) and rather small for carbon (5%). The potential parameters are given for silicon and the predicted properties are compared with ab initio calculations and experimental data.
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页数:8
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