High mobility polymer thin-film transistors

被引：10

作者：

Liu Yu-Rong ^{[1
]}

Wang Zhi-Xin ^{[1
]}

Yu Jia-Le ^{[1
]}

Xu Hai-Hong ^{[2
]}

机构：

[1] S China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China

[2] S China Univ Technol, Dept Appl Phys, Guangzhou 510640, Guangdong, Peoples R China

来源：

ACTA PHYSICA SINICA | 2009年 / 58卷 / 12期

关键词：

polymer thin-film transistor; poly(3-hexylthiophene); field-effect mobility; surface modification; FIELD-EFFECT TRANSISTORS; REGIOREGULAR POLY(3-HEXYLTHIOPHENE); PENTACENE; BUFFER;

D O I：

10.7498/aps.58.8566

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Polymer-based thin film transistors (PTFFs) were successfully fabricated on silicon substrates which was used as gate electrode, thermal silicon dioxide was used as gate insulators and poly(3-hexylthiophene) as semiconducting active layers for the transistors. The fabrication and measurement of the devices were all performed in the clean air. The PTFFs with a surface-modified gate insulator show better electric characteristics with the field-effect mobility of 0.02 cm(2)/(Vs) and the on/off ratio higher than 10(5).

引用

页码：8566 / 8570

页数：5

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