An organic thin-film transistor of high mobility by dielectric surface modification with organic molecule

被引:57
|
作者
Kim, JM
Lee, JW
Kim, JK
Ju, BK [1 ]
Kim, JS
Lee, YH
Oh, MH
机构
[1] KIST, Microsyst Ctr, Seoul 136791, South Korea
[2] Dankook Univ, Dept Chem, Seoul 140714, South Korea
[3] Korea Univ, Dept Phys, Seoul 136701, South Korea
[4] Dankook Univ, Sch Elect Elect & Comp Engn, Seoul 140714, South Korea
[5] Dankook Univ, Dept Elect & Comp Engn, Seoul 140714, South Korea
关键词
D O I
10.1063/1.1841470
中图分类号
O59 [应用物理学];
学科分类号
摘要
Organic thin-film transistors (OTFTs) based on pentacene semiconductor are elaborated on the plastic substrates through a four-level mask process without photolithographic patterning to yield a simple fabrication process. Octadecyltrimethoxysilane (OTMS) as an organic molecule for self-assembled monolayers is deposited on the surface of zirconium oxide dielectric layer. The effect of OTMS interlayer with gate dielectric surface modification on the field effect mobility of OTFTs has been examined and these prototype organic transistors showed excellent electrical characteristics with field effect mobility >0.66 cm(2)/V s and I-on/I-off>10.5 (C) 2004 American Institute of Physics.
引用
收藏
页码:6368 / 6370
页数:3
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