Optical effects of annealing on Yb-doped Y2SiO5 thin films

被引：11

作者：

Denoyer, A. ^{[1
]}

Jandl, S.

Thibault, F.

Pelenc, D.

机构：

[1] Univ Sherbrooke, Dept Phys, Sherbrooke, PQ J1K 2R1, Canada

[2] CEA Grenoble, LETI DOPT STCO, F-38054 Grenoble 09, France

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2007年 / 19卷 / 15期

关键词：

D O I：

10.1088/0953-8984/19/15/156222

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper we investigate the optical effects of annealing under an oxygen atmosphere of Yb-doped Y2SiO5 thin films grown by liquid phase epitaxy. Infrared transmission, particularly adapted to thin film characterizations by means of Yb3+ crystal field excitations, is used to single out the effects of annealing. For instance, absorption intensities increase by similar to 10% and disorder in Yb3+ substitution is reduced. Micro-Raman backscattering measurements detect no particular defects in as-grown and annealed thin films.

引用

页数：8

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