Photosensitivity of p-type black Si field emitter arrays

被引：10

作者：

Mingels, S. ^{[1
]}

Porshyn, V. ^{[1
]}

Prommesberger, C. ^{[2
]}

Langer, C. ^{[2
]}

Schreiner, R. ^{[2
]}

Luetzenkirchen-Hecht, D. ^{[1
]}

Mueller, G. ^{[1
]}

机构：

[1] Univ Wuppertal, Dept Phys, Sch Math & Nat Sci, D-42119 Wuppertal, Germany

[2] OTH Regensburg, Fac Gen Sci & Microsyst Technol, D-93053 Regensburg, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 119卷 / 16期

关键词：

ELECTRON-EMISSION; SILICON CATHODES; MASSIVE ARRAYS; FABRICATION; TIP; DENSITY; MODEL;

D O I：

10.1063/1.4948328

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the properties of black Si field emitter arrays under strong electric fields and laser illumination. A low onset field of 1.8 MV/m for an emission current of 1 nA was obtained. A pronounced saturation region of the dark and photo-enhanced current was observed, which provided a short-term stability of 0.1% at 0.4 mu A and 0.7% at 1.0 mu A, respectively. As maximum value for the photosensitivity, an on-off current switching ratio of 43 reaching about 13 mu A was achieved at a laser power of 15 mW. Electron spectra in the dark and under laser illumination are presented, showing a current and light-sensitive voltage drop across the emitters as well as hints for hot electron emission. Published by AIP Publishing.

引用

页数：8

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