Electrical Characteristics of Au/PVA (x-doped)/n-Si: Comparison Study on the Effect of Dopant Type in PVA

被引：2

作者：

Dokme, Ilbilge ^{[1
]}

Altindal, Semsettin ^{[1
]}

机构：

[1] Gazi Univ, Fac Gazi Educ, Sci Educ Dept, Ankara, Turkey

来源：

FIBERS AND POLYMERS | 2014年 / 15卷 / 11期

关键词：

Au/PVA(x-doped)/n-Si; Nanofiber; Schottky diode; Polyvinyl alcohol; Electrospinning technique; SCHOTTKY-BARRIER; CURRENT-VOLTAGE; ELECTRONIC PARAMETERS; DIELECTRIC-PROPERTIES; SI; DIODE; NANOFIBERS; JUNCTION; STATES;

D O I：

10.1007/s12221-014-2253-x

中图分类号：

TB3 [工程材料学]; TS1 [纺织工业、染整工业];

学科分类号：

0805 ; 080502 ; 0821 ;

摘要：

The main propose of this study is to investigate whether the doppant material in PVA would change the electrical characteristics of Au/PVA (X-doped) n-Si Schottky structure. Therefore, Au/PVA (Co, Zn-doped) n-Si (D1) and /PVA (Co, Ni-doped) n-Si (D2) Schottky structures were fabricated under the same condition using n-type (phosphor-doped) single crystal silicon wafer with (111) surface orientation. After the PVA/(Co-Zn) and PVA/(Co-Ni) acetates was obtained, the nanofiber film was fabricated on the silicon wafer by the use of an electrospinning technique. The results indicated that the electrical parameters of Au/PVA (x-doped) n-Si Schottky structure were significantly influenced from the doppant material in PVA. Comparative results on electrical parameters of D1 and D2 were reported in this study.

引用

页码：2253 / 2259

页数：7

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