Single crystal semiconductor saturable absorber and the semiconductor substrate microchip lasers

被引:0
|
作者
Chen, J [1 ]
Lin, JT [1 ]
Hung, TC [1 ]
机构
[1] Chung Hua Univ, Inst Mech & Aerosp Engn, Hsinchu 30053, Taiwan
关键词
single crystal semiconductor saturable absorber; Q-switched modulation; mode-locked modulation; Q-switched mode-locking modulation; microchip lasers; semiconductor substrate microchip laser;
D O I
10.1117/12.574251
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have investigated many different types of Nd solid state lasers and the passive modulator materials that can passively Q-switch, mode-lock, Q-switched mode-lock all the above solid state lasers. The mechanism of the typical Q-switched mode-lock mechanisms were proposed and analyzed in detail. In all the microchip laser developments, the only tolerance that can reduce the physics size, optimize the modulated output efficiency and minimize the component price is to use the doped single crystal semiconductor saturable absorbing modulators as we are proposing. We have used the MEMS technologies for the fabrication of the most compact, highest efficiency and most low price semiconductor substrate microchip laser. Two out of four components of the various direct generation as well as OPO generation of the microchip lasers that generate visible, near infrared and infrared wavelengths and with Q-switch, mode-lock, Q-switched mode-lock modulation could be achieved.
引用
收藏
页码:515 / 522
页数:8
相关论文
共 50 条
  • [21] Ultrafast spectroscopy of semiconductor saturable absorber mirror
    Zhang, Jing
    Bauer, Dominik
    Koenig, Farina
    Dekorsy, Thomas
    Zhang, Xihe
    Chen, Yafu
    CHINESE OPTICS LETTERS, 2010, 8 (07) : 676 - 679
  • [22] Excitable solitons in a semiconductor laser with a saturable absorber
    Turconi, Margherita
    Prati, Franco
    Barland, Stephane
    Tissoni, Giovanna
    PHYSICAL REVIEW A, 2015, 92 (05):
  • [23] SELFPULSING CONDITIONS FOR SEMICONDUCTOR LASERDIODES WITH SATURABLE ABSORBER
    GROTHE, H
    HARTH, W
    AEU-ARCHIV FUR ELEKTRONIK UND UBERTRAGUNGSTECHNIK-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1983, 37 (1-2): : 56 - 59
  • [24] Antimonide semiconductor saturable absorber for 1.5μm
    Grange, R
    Ostinelli, O
    Haiml, M
    Krainer, L
    Spühler, GJ
    Ebnöther, M
    Gini, E
    Schön, S
    Keller, U
    ELECTRONICS LETTERS, 2004, 40 (22) : 1414 - 1416
  • [25] Space Radiation Effects on a Semiconductor Saturable Absorber
    Jang, Yoon-Soo
    Kim, Seung-Man
    Lee, Joohyung
    Lee, Keunwoo
    Han, Seongheum
    Kim, Young-Jin
    Kim, Seung-Woo
    2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR), 2013,
  • [26] Ultrafast spectroscopy of semiconductor saturable absorber mirror
    张靓
    Dominik Bauer
    Farina Knig
    Thomas Dekorsy
    张喜和
    陈亚符
    Chinese Optics Letters, 2010, 8 (07) : 676 - 679
  • [27] Semiconductor saturable-absorber mirror passively Q-switched Yb:YAG microchip laser
    尹霞
    孟俊清
    祖继峰
    陈卫标
    ChineseOpticsLetters, 2013, 11 (08) : 1 - 3
  • [28] Passively Q-switched Yb:YAG microchip laser using a semiconductor saturable absorber mirror
    Spühler, GJ
    Paschotta, R
    Kullberg, MP
    Graf, M
    Moser, M
    Keller, U
    Brovelli, LR
    Harder, C
    Mix, E
    Huber, G
    ADVANCED SOLID-STATE LASERS, 1999, 26 : 187 - 189
  • [29] Semiconductor saturable-absorber mirror passively Q-switched Yb:YAG microchip laser
    Yin, Xia
    Meng, Junqing
    Zu, Jifeng
    Chen, Weibiao
    CHINESE OPTICS LETTERS, 2013, 11 (08)
  • [30] Analytical model for saturable aging in semiconductor lasers
    Lam, S.K.K. (lamkk@mcmaster.ca), 1803, American Institute of Physics Inc. (94):