Relaxor properties of lanthanum-doped bismuth layer-structured ferroelectrics

被引:44
|
作者
Chen, XB [1 ]
Hui, R
Zhu, J
Lu, WP
Mao, XY
机构
[1] Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R China
[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210008, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.1807029
中图分类号
O59 [应用物理学];
学科分类号
摘要
Several polycrystalline samples of bismuth layer-structured ferroelectrics (BLSF) family doped by lanthanum, Bi4-xLaxTi3O12, SrBi4-xLaxTi4O15, Sr2Bi4-xLaxTi5O18, and (Bi,La)(4)Ti3O12-Sr(Bi,La)(4)Ti4O15, were prepared by the traditional solid-state reaction method. Their ferroelectric and dielectric properties were investigated. The dielectric measurement data showed that the content of lanthanum determined the ferroelectric characteristics of the compounds. In each series samples, they behaved as normal ferroelectrics for small x, but all of them tended to become relaxors when x was increased. The critical value of the La content causing relaxor characteristics is different for the different BLSFs due to the difference of the number of strontium atoms in their crystal structures. The appearance of the relaxor behavior was attributed to a ferroelectric microdomain state induced by random fields. (C) 2004 American Institute of Physics.
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页码:5697 / 5700
页数:4
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